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STRH50P6FSY1 STRH50P6FSY3
P-channel 60V - 0.047 - TO-254AA Rad-hard low gate charge STripFETTM Power MOSFET
Features
Type STRH50P6FSY1 STRH50P6FSY3

VDSS 60 V 60 V
Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100 kRad TID SEL & SEGR with 34Mev/cm/mg LET ions Figure 1. Internal schematic diagram
TO-254AA
1 3 2
Applications

Satellite High reliability
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Table 1. Device summary
Order codes STRH50P6FSY1 (1) STRH50P6FSY3
1. Mil temp range 2. Space flights parts (full ESCC flow screening)
(2)
Marking RH50P6FSY1 RH50P6FSY3
Package TO-254AA TO-254AA
Packaging Individual strip pack Individual strip pack
November 2007
Rev 3
1/13
www.st.com 13
Contents
STRH50P6FSY3
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics (curves) ............................. 7
3 4 5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STRH50P6FSY3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID
(1)
Absolute maximum ratings (pre-irradiation)
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC= 25C Drain current (continuous) at TC= 100C Drain current (pulsed) Total dissipation at TC= 25C Value 60 18 50 32 200 180 1.4 -55 to 150 150 Unit V V A A A W V/ns C C
ID (1) IDM (2) PTOT
(1)
dv/dt (3) Peak diode recovery voltage slope Tstg Tj Storage temperature Max. operating junction temperature
1. Rated according to the Rthj-case + Rthc-s 2. Pulse width limited by safe operating area 3. ISD 50 A, di/dt 56 A/s, VDD = 80%V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter Value 0.5 0.21 48 Unit C/W C/W C/W
Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink
Rthj-amb Thermal resistance junction -amb
Table 4.
Symbol IAR EAS EAR(1)
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, ID=IAR, VDD=42 V) Repetitive avalanche Value 25 932 45 Unit A mJ mJ
1. Pulse number = 10; f= 10 KHz; D.C. = 50%
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed
3/13
Electrical characteristics
STRH50P6FSY3
2
Electrical characteristics
(TCASE = 25C unless otherwise specified)
2.1
Pre-irradiation
Table 5.
Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = 18 V ID = 250 A, VGS = 0 VDS =VGS, ID = 1 mA VGS = 12 V, ID = 25 A 100 2 0.047 4.5 0.053 Min. Typ. Max 10 Unit A nA V V
100
Table 6.
Symbol Ciss Coss Crss Qg Qgs Qgd RG
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. 2632 440 187.2 92.8 10.4 20.8 0.8 Typ. 3290 550 234 116 13 26 1 Max 3948 660 280.8 139.2 15.6 31.2 1.2 Unit pF pF pF nC nC nC
VDS = 25 V, f=1 MHz, VGS=0
VDD = 50 V, ID = 25 A, VGS=12 V f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. 13.6 40 65.6 28.8 Typ. 17 50 82 36 Max 20.4 60 98.4 43.2 Unit ns ns ns ns
VDD = 30 V, ID = 25 A, RG = 4.7 , VGS = 12 V
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STRH50P6FSY3
Electrical characteristics
Table 8.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, VGS = 0 ISD = 50 A, di/dt = 100 A/s VDD= 20 V, Tj = 25C ISD = 50 A, di/dt = 100 A/s VDD= 20 V, Tj = 150C 240 300 3.85 25.6 376 5.64 30 Test conditions Min. Typ. Max Unit 50 200 1.1 360 A A V ns C A ns C A
300
451
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
2.2
Post-irradiation
The ST rad-hard power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25C up to 100Krad (a)) Table 9.
Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on)
On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = 18 V ID = 250 A, VGS = 0 VDS =VGS, ID = 1 mA VGS = 12 V, ID = 25 A 100 2 0.047 4.5 0.053 Min. Typ. Max 10 Unit A nA V V
100
a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec.
5/13
Electrical characteristics Table 10.
Ion Kr Xe
STRH50P6FSY3
Single event effect, SOA(1)
Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV) 316 459 Range (m) 43 43 VDS (V) @VGS0V 60 48
1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrated
Figure 2.
Bias condition during radiation
Table 11.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, VGS = 0 ISD = 50 A, di/dt = 100 A/s VDD= 20 V, Tj = 25C ISD = 50 A, di/dt = 100 A/s VDD= 20 V, Tj = 150C 240 300 3.85 25.6 376 5.64 30 Test conditions Min. Typ. Max Unit 50 200 1.1 360 A A V ns C A ns C A
300
451
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
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STRH50P6FSY3
Electrical characteristics
2.3
Figure 3.
Electrical characteristics (curves)
Safe operating area Figure 4. Thermal impedance
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
7/13
Electrical characteristics Figure 9. Normalized BVDSS vs temperature
STRH50P6FSY3 Figure 10. Static drain-source on resistance
Figure 11. Normalized gate threshold voltage vs temperature
Figure 12. Normalized on resistance vs temperature
Figure 13. Source drain-diode forward characteristics
8/13
STRH50P6FSY3
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for resistive load (1)
1. Max driver VGS slope = 1V/ns (no DUT)
Figure 15. Unclamped inductive load test circuit (single pulse and repetitive)
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Package mechanical data
STRH50P6FSY3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STRH50P6FSY3
Package mechanical data
Table 12.
DIM.
TO-254AA mechanical data
mm. MIN. TYP MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 6.86 0.89 3.81 3.81 12.95 3.05 0.71 1.0 1.65 0.065 14.50 0.510 0.120 0.025 0.040 1.14 0.035 0.150 0.150 0.570 MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 0.270 0.045 inch TYP. MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685
A B C D E F G H I J K L M N R1 R2
13.59 13.59 20.07 6.32 1.02 3.53 16.89
Mechanical drawing
11/13
Revision history
STRH50P6FSY3
5
Revision history
Table 13.
Date 05-Jul-2006 20-Dec-2006
Document revision history
Revision 1 2 First release Figure 3. has been updated Note 2 on device summary has been corrected Added figures: 2 and 15. Updated values on tables: 6, 7, 8 and 11 Minor text changes to improve readability Changes
20-Nov-2007
3
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STRH50P6FSY3
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